Pascal + V7 Samsung 990 Pro 1 TB
 
 

Pascal + V7 Samsung 990 Pro 1 TB
pacal v7



The Samsung 990 Pro is a solid-state drive in the M.2 2280 form factor, launched on August 24th, 2022. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 990 Pro interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Pascal (S4LV008) from Samsung, a DRAM cache chip is available. Samsung has installed 176-layer TLC NAND flash on the 990 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 114 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Pro is rated for sequential read speeds of up to 7,450 MB/s and 6,900 MB/s write; random IOPS reach up to 1200K for reads and 1550K for writes.

At its launch, the SSD was priced at 179 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

 

 

1  NAND Flash

2.    Manufacturer: Samsung

3.    Name: V-NAND V7

4.    Part Number:  K90UGY8J5D-CCK0

5.    Type:   TLC

6.    Technology:    176-layer

7.    Speed: 2000 MT/s

8.    Capacity:         2 chips @ 4 Tbit

9.    Toggle:            5.0

10.  Topology:        Charge Trap

11.  Die Size:          60 mm²

12.  (8.5 Gbit/mm²)

13.  Dies per Chip: 8 dies @ 512 Gbit

14.  Planes per Die:           4

15.  Decks per Die:            2

16.  Word Lines:     191 per NAND String

17.  92.1% Vertical Efficiency

18.  Read Time (tR):          40 µs

19.  Program Time (tProg):           347 µs

20.  Block Erase Time (tBERS):   3.5 ms

21.  Die Read Speed:        1600 MB/s

22.  Die Write Speed:         184 MB/s

23.  Page Size:       16 KB

 

 

Crucial P3 Plus 1 TB (Micron N48R FortisFlash)

 

 

crucial

The Crucial P3 Plus is a solid-state drive in the M.2 2280 form factor, launched on May 25th, 2022. It is available in capacities ranging from 500 GB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Crucial P3 Plus interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. Crucial has installed 176-layer QLC NAND flash on the P3 Plus, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 250 GB. Copying data out of the SLC cache (folding) completes at 100 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The P3 Plus is rated for sequential read speeds of up to 5,000 MB/s and 3,600 MB/s write.

At its launch, the SSD was priced at 100 USD. The warranty length is set to five years, which is an excellent warranty period. Crucial guarantees an endurance rating of 220 TBW, a relatively low value compared to other SSDs.

 

 

1.  NAND Flash

2.    Manufacturer: Micron

3.    Name: N48R FortisFlash

4.    Part Number:  NY161

5.    Rebranded:     MT29F4T08GMLCEJ4-QA:C

6.    Type:   QLC

7.    Technology:    176-layer

8.    Speed: 1600 MT/s

9.    Capacity:         2 chips @ 4 Tbit

10.  ONFI:  4.2

11.  Topology:        Replacement Gate

12.  Die Size:          69 mm²

13.  (14.8 Gbit/mm²)

14.  Dies per Chip: 4 dies @ 1 Tbit

15.  Planes per Die:           4

16.  Decks per Die:            2

17.  Word Lines:     195 per NAND String

18.  90.3% Vertical Efficiency

19.  Read Time (tR):          98 µs

20.  Program Time (tProg):           2339 µs

21.  Block Erase Time (tBERS):   7.5 ms

22.  Die Read Speed:        695 MB/s

23.  Die Write Speed:         27 MB/s

24.  Endurance:

25.  (up to)  1500 P/E Cycles

26.  (100000 in SLC Mode)

27.  Page Size:       16 KB

28.  Block Size:      2816 Pages

29.  Plane Size:      817 Blocks

 

 

Kingston KC3000 1 TB (Micron B47R)

 

 

kingston k

The Kingston KC3000 is a solid-state drive in the M.2 2280 form factor, launched in October 2021. It is available in capacities ranging from 512 GB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Kingston KC3000 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Kingston has installed 176-layer TLC NAND flash on the KC3000, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 369 GB, once it is full, writes complete at 1900 MB/s. Copying data out of the SLC cache (folding) completes at 1015 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The KC3000 is rated for sequential read speeds of up to 7,000 MB/s and 6,000 MB/s write; random IOPS reach up to 900K for reads and 1000K for writes.

At its launch, the SSD was priced at 175 USD. The warranty length is set to five years, which is an excellent warranty period. Kingston guarantees an endurance rating of 800 TBW, a typical value for consumer SSDs.

 

1.  NAND Flash

2.    Manufacturer:       Micron

3.    Name:       B47R FortisFlash

4.    Rebranded:           FB25608UCM1-9E

5.    Type:         TLC

6.    Technology:          176-layer

7.    Speed:       1200 MT/s .. 1600 MT/s

8.    Capacity:   4 chips @ 2 Tbit

9.    ONFI:        4.1

10.  Topology:  Replacement Gate

11.  Die Size:    50 mm²

12.  (10.2 Gbit/mm²)

13.  Dies per Chip:       4 dies @ 512 Gbit

14.  Planes per Die:     4

15.  Decks per Die:      2

16.  Word Lines:           195 per NAND String

17.  90.3% Vertical Efficiency

18.  Read Time (tR):    56 µs

19.  Program Time (tProg):     502 µs

20.  Block Erase Time (tBERS):         15 ms

21.  Die Read Speed:  1143 MB/s

22.  Die Write Speed:   127 MB/s

23.  Endurance:

24.  (up to)        3000 P/E Cycles

25.  (40000 in SLC Mode)

26.  Page Size: 16 KB

27.  Block Size:            2112 Pages

28.  Plane Size:            550 Blocks

 

 

 

1.  Performance

2.    Sequential Read:        7,000 MB/s

3.    Sequential Write:         6,000 MB/s

4.    Random Read:           900,000 IOPS

5.    Random Write:            1,000,000 IOPS

6.    Endurance:     800 TBW

7.    Warranty:        5 Years

8.    MTBF: 2.0 Million Hours

9.    Drive Writes Per Day (DWPD):          0.4

10.  SLC Write Cache:       approx. 369 GB

11.  (dynamic only)

12.  Speed when Cache Exhausted:         approx. 1900 MB/s

13.  Cache Folding Speed:            1015 MB/s